BDX33B transistors equivalent, darlington complementary silicon power transistors.
* High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0
* Collector−Emitter Sustaining Voltage at 100 mAdc
VCEO(sus) = 80 Vdc (min) − BDX33B, BDX334B = 100 Vdc (mi.
Features
* High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0
* Collector−Emitter Sustaining Voltage at 100 m.
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